非晶硅薄膜表面微纳结构制备及抗反射性能研究

Research on Preparation and Antireflective Performance of Micro-nano Structure of in Amorphous Silicon Thin Film

为了对非晶硅薄膜表面改性,使其具有更好的抗反射性,将采用激光干涉光刻的方法,在非晶硅薄膜表面制备具有抗反射性能的微纳结构。首先搭建三光束激光干涉系统,使用波长为1064nm的Nd:YAG激光光源,使其在空间分布上接近旋转对称的三束光,对非晶硅薄膜进行干涉实验,然后用扫描电子显微镜(SEM)、原子力显微镜(AFM)对激光刻蚀后的非晶硅薄膜表面结构特征参数进行检测,并使用反射率测量仪对改性后的非晶硅薄膜表面反射率进行测量,分析各参数对抗反射性能的影响。实验结果表明,随着能量逐步增加,光强分布周期没有发生改变,孔的直径、孔与孔之间的距离以及结构深度逐渐发生改变且呈线性分布,而非晶硅表面反射率逐步降低,最低达到10%。

In order to modify the amorphous silicon thin film and make it present a good anti-reflection. This article adopt the method of laser interference lithography to fabricate micro-nano structures with anti-reflective properties in amorphous silicon thin film surface. A three-beam laser interference system is built,using a wavelength of 1064 nm Nd：YAG laser as a light source,the spatial distribution of nearly three beams rotationally symmetric. The surface pattern of the samples are observed by scanning electron microscope（SEM）. In order to obtain the characteristic parameters,including the size and depth information of amorphous silicon（a-Si）,atomic force microscope（AFM） was operated in the tapping mode. The last but not least,the reflectance of the samples surface was measured by reflectivity measurement system which include a Xenon-lamp as light source and a spectrophotometer with an integrating sphere and analysied the effect of antireflective performance in different characteristic parameters. The experimental results show that with the increase of energy gradually,the period of the intensity distribution did not change,the diameter of the hole,the distance between the hole and the depth of the hole gradually changed and a linear distribution,and amorphous silicon surface reflectivity is gradually reduced,the average reflectance of this periodic structure is less than 10%.