CdSe/CdS纳米颗粒共敏化ZnO光电极的制备及光电化学性能研究

Preparation and photoelectrochenistry performance of CdSe/CdS nanocrystal co-sensitized ZnO photoelectrode

采用电沉积法将CdS和CdSe纳米颗粒沉积在ZnO纳米线阵列上得到CdSe/CdS纳米颗粒共敏化ZnO光电极。利用X射线衍射、扫描电镜、透射电镜和能谱仪等对所得样品结构和形貌进行表征,并通过紫外-可见分光光度计和电化学工作站测试其光吸收性能和光电化学性能。结果发现,相对纳米颗粒单敏化CdS/ZnO光电极而言,纳米颗粒共敏化CdSe/CdS/ZnO光电极具有更好的可见光吸收性能,进而提高短路电流密度和光电转换效率分别到9.56mA/cm2和1.89%。

The CdS and CdSe nanocrystals were deposited on the ZnO nanowire arrays by electrodeposition method to obtain CdSe/CdS nanocrystals co-sensitized ZnO photoelectrodes.The morphology and composition of samples were characterized by XRD,SEM,TEM and EDS,respectively.The light absorption properties and photoelectrochemical performance of photoelectrodes were investigated by means of ultraviolet-visible spectrophotometer and electrochemical work station.The results showed that the visble-light absorption properties of CdSe/CdS/ZnO photoelectrodes exhibited more excellent than that of CdS/ZnO photoelectrodes.The short circuit photocurrent density and photoelectric conversion efficiency of CdSe/CdS/ZnO could reach up to 9.56mA/cm^2 and 1.89%.