MPCVD制备金刚石膜的形核与生长过程

MPCVD-produced Diamond Films:Nucleation and Growth Processes

简要介绍了金刚石膜的物理化学特性及应用领域。对比分析了主要化学气相沉积方法的优缺点,并指出MPCVD所面临的技术瓶颈。总结了反应腔体内压强、基片温度、基体材料及增强形核技术对金刚石膜形核过程的影响。较低腔体内压力、基片温度,高碳源浓度及等离子体预处理能有效提高形核密度。阐述了各过程参数对金刚石膜生长的影响和微米、纳米、超纳米金刚石膜的技术特点及应用。指出各类金刚石膜制备所面临的技术难题,并综述了解决该技术瓶颈的最新研究工作。

This paper briefly introduces the physical and chemical properties and application of diamond films. The merits and demerits of different chemical vapor deposition methods which are applied to diamond film production are discussed, and technology bottleneck of MPCVD is presented. The influences on nucleation process of diamond films, specifically, reaction chamber pressure, substrate temperature, substrate material and enhanced nucleation technique, are summarized. It suggests that low reaction chamber pressure and substrate temperature, high carbon source concentration and plasma pretreatment would greatly benefit the nucleation density. We also expounded the influences of various process parameters on growth of diamond films and the technical characteristics about synthetic diamond films with microcrystalline, nanocrystalline, ultrananoerystalline. The technical problems of all varieties of synthetic diamond films are shown, and researches aiming to resolve them are summarized as well.