摘要
以类单晶硅和铸锭多晶硅为研究对象,综合分析其红外(IR)图、光致发光(PL)图、间隙铁(Fei)浓度、少子寿命及电学性能特征。结果表明:相对于铸锭多晶硅,类单晶硅的晶粒尺寸大,晶界和位错少,间隙铁浓度低,少子寿命和电池效率高,晶体质量优于铸锭多晶硅。
This paper studies similar monocrystalline silicon and cast multicrystalline silicon, synthetically analyzes their IR, PL, concentration of interstitial Fei, minority carrier lifetime and electrical performance character. Analysis showed that relative to muhicrystalline silicon, similar monocrystalline silicon is with bigger grain size, less grain boundary and dislocation, lower concentration of interstitial Fei, higher minority carrier lifetime, cell efficiency and crystal quality.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2016年第7期1744-1747,共4页
Acta Energiae Solaris Sinica
关键词
晶界
位错
少子寿命
电池效率
grain boundary
dislocation
minority carrier lifetime
cell efficiency
