两步边缘场电泳法制备短沟道高开关比碳纳米管薄膜晶体管

Short channel carbon nanotube thin film transistors with high on/off ratio fabricated by two-step fringing field dielectrophoresis

与现有的薄膜晶体管技术相比，碳纳米管薄膜晶体管（CNT—TFT）具有载流子迁移率高、稳定性好、加工温度低、工艺过程简单的优势，因而被认为在显示驱动背板、柔性电子器件及传感器等方面具有广泛的实用前景．通常CNT—TFT的制备多是采用CNT溶液沉积法，在基底上得到的是无序的网络状薄膜，存在大量的CNT交叉结．受CNT材料制备的限制，

A two-step fringing field dielectrophoretic assembly method for carbon nanotube thin film transistors(CNT-TFTs) fabrication was demonstrated. Densely aligned CNT arrays were assembled at the source and drain electrodes sequentially which form a cascade structure of the aligned CNT arrays. The cascade structure reduces the possibility of percolating metallic pathways in the channel,which is beneficial to device performance. In this way, both high on/off current ratio I_(on)/I_(off)(up to 10~7) and high out-put current density(8.5 l A/lm) were obtained in short channel length(1–2.5 lm) CNT-TFTs. The reported CNT assembling strategy is site selective and highly efficient, which can be scaled up to large size substrates and leads to high throughput of CNT-TFTs fabrication.