去除硅片背面金属污染的方法研究

Research on the Method of Removing Metal Contamination on the Back of Silicon Wafer

电路的集成度日益提高,单元图形的尺寸日益微化,污染物对器件的影响也愈加突出,以至于洁净表面的制备已成为超亚微米的关键技术。人们普遍对外来污染、硅片的正面污染非常警觉。在生产线上FEOL区间,一些来自上工序的硅片背面污染,会对下工序产生实际的二级污染的影响。寻找实际生产中会对下工序产生背面二级污染影响的源头,并对去除生产线硅片背面金属污染的方法进行了研究,并提出一种行之有效的去除背面金属污染的方法。

In FEOL wafer FAB, some pollution from the wafer back will produce the actual 2nd pollution to the next. Looking pollution source in the process and removing metal pollution on silicon wafer back surface in the production line was studied. A method was put forward to effective removal of metal pollution on the back.