期刊文献+

沟槽肖特基二极管工艺研究 被引量:4

Study for Trench Schottky Diode Process
下载PDF
导出
摘要 随着国家对新能源电子产品的大力扶持,各种节能型电子产品日益壮大,其中沟槽型肖特基二极管相比于平面型具有不可比拟的优势,最近备受青睐。结合六英寸生产线的工艺能力,通过设计沟槽,优化多晶回刻,引入ONO层间介质和控制Pt基势垒金属合金,创新地建立一套沟槽SBD工艺平台,生产出沟槽型肖特基二极管,其参数性能已经达到或超过业内同类产品水平。 With Chinese government's strengthened support for new energy electronic products, a variety of energy-saving electronic products are growing. Among them, compared with planar Schottky diode, trench Schottky diode has much more advantages. At present, there is no in- depth study on its manufacturing process. In this paper, based on process capability of six inch production line, an innovative platform of trench SBD technology is established. It consists of groove process, optimized poly etch back in trench, ONO dielectic and well controlled alloy of Pt based barrier metal. The parameter performance of the product has reached or exceeded the level of similar products in the industry.
出处 《集成电路应用》 2016年第8期25-28,共4页 Application of IC
关键词 侧墙 多晶回刻 ONO结构 Pt基势垒金属合金 Side wall, poly etch back, ONO structure, Pt based barrier metal alloy
  • 相关文献

参考文献3

  • 1翟东媛.沟槽式肖特基势垒二极管电学性能研究[M].南京大学,2014.
  • 2李惟一.新型MOS沟槽夹断型肖特基整流器的模拟研究[M].复旦大学,2011.
  • 3Dr.B.Jayant Baliga.Fundamentals of Power Semiconductor Devices[M], Springer, 2008.

同被引文献16

引证文献4

二级引证文献3

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部