带MIM电容金属层光刻工艺的优化

Optimization of Metal Layer Lithography with MIM Capacitor

金属-绝缘层-金属(Metal-insulator-Metal,MIM)电容在模拟和射频集成电路中有重要的应用需求。该结构的存在,对底层金属连线的光刻工艺提出更高要求。结合在商用工艺中碰到的失效问题,通过模拟分析和实验结果显示,通过调整抗反射层厚度,使得曝光时反射波的影响减小,优化了带MIM电容金属层光刻工艺,达到了提高良率的目的。

Metal insulator metal （MIM） capacitors have important application requirements in analog and RF integrated circuits. Because of this structure, it is more important that the lower layer of metal wire connects to the higher requirements of the lithography process.Combined with the failure problems encountered in commercial process, the simulation analysis and experimental results showed that exposure reduced the effect of reflection wave and optimization with MIM capacitor metal layer lithography process by adjusting the anti reflection layer thickness so that we achieved the purpose of improving the yield.