CMP抛光界面温度的理论分析与仿真

Theoretical Investigation and Simulation of Temperature on Polishing Interface in CMP

介绍了抛光界面的温度对化学机械抛光过程的重要影响。在对温度变化的原因进行分析的基础上,忽略抛光液的流场分布、抛光界面压力分布的均匀性等因素,定性地分析了抛光垫和工件的温度分布情况。并利用红外摄像仪验证了抛光垫表面的温度分布。通过抛光界面的热量流动理论分析,利用ANSYS软件对工件在抛光过程中的温度变化进行仿真计算,得到工件的抛光表面温度随时间的变化曲线,可以根据仿真结果预测工件在不同抛光工艺参数条件下的温度变化情况。

The important influence of polishing temperature on the interface having in the chemical mechanical polishing （CMP）process are introduced,and it qualitatively analyzed the polishing temperature distribution on the pad and workpiece on the basis of the cause of the temperature change ,in the process of analysis ,the flow field distribution of the polishingfluid and the uniformity of the interfacial pressure distribution are neglected. It also used infrared camera to verify the temperature distribution on the surface of the pad. In addition,the temperature change in the process of the workpiece was calculated by ANSYS, through theoretical analysis of heat flow on polishing interface,so it got the workpiece surface temperature versus time cun：es. Temperature variation of workpiece in different polishing process parameters can be predicted according to the simulation results.