摘要
CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.
CuPt-type ordering with undesirable properties always occurs in GaInP at growth conditions that are very close to those leading to the highest quality material in metal organic chemical vapor deposition. In this work, highly disordered GaInP with high crystalline quality was obtained by optimizing growth conditions. Room- temperature and low-temperature photoluminescence （PL） spectra of A1GalnP/GaInP/A1GaInP double heterostruc- tures （DHs） reveal that the band edge emission intensity is enhanced by optimizing growth temperature, V/III ratio, and reactor pressure at the expense of low energy peak originating from spatially indirect recombination due to the ordering-related defects. The DH sample with less ordering-related defects demonstrates a longer effective minority carrier lifetime, consequently, the GaInP solar cell shows a significant improvement in the performance.
基金
Project supported by the National Natural Science Foundation of China(No.61376065)
the Suzhou Science and Technology Project(No.ZXG2013044)
