摘要
The 100-nm T-gate InP-based InA1As/InGaAs high electron mobility transistors （HEMTs） with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium （In） composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm.max = 1441 mS/mm, cutoff frequency fT = 260 GHz, and maximum oscillation frequency fmax=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters （S parameters） for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach.
The 100-nm T-gate InP-based InA1As/InGaAs high electron mobility transistors （HEMTs） with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium （In） composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance Gm.max = 1441 mS/mm, cutoff frequency fT = 260 GHz, and maximum oscillation frequency fmax=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters （S parameters） for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach.
基金
Project supported by the National Natural Science Foundation of China(No.61434006)
