摘要
An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.
An electromagnetic pulse（EMP）-induced damage model based on the internal damage mechanism of the Ga As pseudomorphic high electron mobility transistor（PHEMT） is established in this paper. With this model, the relationships among the damage power, damage energy, pulse width and signal amplitude are investigated. Simulation results show that the pulse width index from the damage power formula obtained here is higher than that from the empirical formula due to the hotspot transferring in the damage process of the device. It is observed that the damage energy is not a constant, which decreases with the signal amplitude increasing, and then changes little when the signal amplitude reaches up to a certain level.
基金
supported by the National Basic Research Program of China(Grant No.2014CB339900)
the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology,China Academy of Engineering Physics(CAEP)(Grant No.2015-0214.XY.K)
