谷电子自由度电学调控的首次实现

First demonstration of the electrical control of the valley degree of freedom

对电子电荷和自旋自由度的电学调控奠定了微纳电子器件和自旋电子器件的工作基础,然而人们对固体材料中电子谷自由度的有效电学调控还处在研究探索阶段。文章简要介绍作者在单层过渡金属硫族化合物(TMDC)和磁性半导体(Ga,Mn)As构成的pn结中,利用电学自旋注入方法首次成功实现对电子谷自由度进行电学调控的工作。

Electrical control of the charge and spin degrees of freedom is the foundation of contemporary micro- and nano- electronics, and spintronics. However, the effective electrical control of the electron valley degree of freedom in solids is still under intensive research. This article presents our recent demonstration of the electrical control of the valley polarization in a pn junction consisting of a monolayer transition metal dichalcogenide and a magnetic semiconductor（Ga,Mn）As, via electrical spin injection.