用蒙特卡罗方法研究X射线在金-硅-金界面的剂量增强效应

Study on the Dose Enhancement Factor of X Ray at Au-Si-Au Interface With Monte Carlo Method

用蒙特卡罗方法(MCNP)计算不同能量的X射线在Au-Si-Au界面处产生的剂量增强系数(DEF)与金(Au)和硅(Si)厚度的关系.结果表明,界面下的DEF随Au厚度的增加而增大,随Si厚度的增加而减小.同时模拟了单层Au(Au-Si)与双层Au(Au-Si-Au)结构在Si一侧的DEF,对于结构Au-Si-Au,界面下产生的剂量增强效应更明显.

The dependence of DEF on energy at Au-Si-Au interface for different thickness of Au and Si is simulated by using Monte Carlo method. The results show that the dose enhancement factor will increase with the increasing of the thickness of Au and decrease with the increasing of the thickness of Si.While simulating the DEF at Au-Si interface and Au-Si-Au interface,the dose enhancement effect at Au-Si-Au interfac is greater.