平栅型双层膜的场致发射性能研究

Research on Field Emission Properties of the Planar-gate Triode with Double-layer Films

通过在平栅型基板上,分别溅射氧化铋薄膜和氧化锡薄膜,形成阴极场发射阵列,并在阴极和栅极之间加载脉冲电流,使阴栅级之间的薄膜形成裂缝,并进行场致发射性能测试,测试结果表明,平栅型双层膜发射器件的开启电压随阳极电压增加而降低。在阳压为3000 V,隔离子高度为500μm时,平栅型双层膜场发射器件的开启电压为110 V,在栅压为110 V时的发射效率为1%左右,随着栅压的增大,发射效率逐渐减小。该双层膜阴极具有均匀的发射性能、良好的栅控能力以及场发射特性。

The field emission device based on the planar-gate triode with B2O3/SnO2 double-layer films based surface conducted emitter （SCE） were successfully fabricated by magnetron sputtering, a pulse current was loaded between the cathode and the gate, and the thin film generated nanogaps. Its field emission （FE） properties were investigated. The experiment results show that with the increase of anode voltage, the anode current of the device increased, while the turn-on voltage decreased. The turn-on voltage of the device was 110 V when the anode voltage was set to 3000 V and the cathode-anode spacing was fixed to 500 μm. The electron-emission efficiency was approximately 1% when the gate voltage was 110 V. With the increase of the gate voltage, the electron-emission efficiency decreased. In addition, the double film-SCE possessed better emission uniformity, better grid control-ability and field emission characteristics.