基于黑磷纳米材料场效应管的电特性研究

Study on Electric Characteristics of Black Phosphorus Nanophase Materials Field Effect Transistor

以红磷、锡和四碘化锡为原料制备黑磷,并用黑磷(BP)纳米材料制作场效应管,用X射线衍射谱(XRD)和光学显微镜(OM)分析了BP样品的结构和形貌,并测试其输出特性曲线和转移特性曲线。BP样品厚度为12 nm,通过计算,其电子迁移率μ_e=248 cm^2/Vs,电流开关比为~10~3。结果表明,基于BP纳米材料场效应管具有较好电子迁移率和开关比,为BP成为未来光电器件备选材料研究奠定基础。

With red phosphorus, Sn and SnI4 as raw material to produce a black phosphorus, The field effect tube was made by using the nano materials of black phosphorus （BP）. Optical microscope（OM） and X-ray diffraction（XRD） were used to characterize the morphology and microstructures of the obtained samples. The output and transfer characteristics were tested respectively. The electronic mobility was 248 cm^2/Vs and ion/off ratio was -10^3 when BP sample thickness was 12 nm. The result shows that black phosphorus nanophase materials field effect transistor have good ion/off ratio and electron mobility and black phosphorus will be the foundation for future optoelectronic devices as alternative materials.