期刊文献+

单晶硅抛光片表面质量探究 被引量:1

Investigation on the Surface Quality of Silicon Wafers
下载PDF
导出
摘要 LED集成度越来越高,集成电路线宽不断收窄,对硅衬底表面的质量提出了越来越严苛的要求,抛光片表面质量对器件制造有重要影响。RCA清洗是晶片清洗最为成熟的工艺,其工艺稳定性受到多重因素影响。从DHF溶液使用及PFA花篮质量两方面分析了RCA清洗过程的两个关键因素对晶片表面质量的影响。 As the integration of LEDs increases and the technology node of ULSI decreases,extremely tight requirements are being placed on the quality of wafers' surface.The quality of wafers' surface has important influence on the device manufacture.RCA is most used in wafer cleaning,which is influenced by many factors.In this study,DHF solution and PFA cassette was investigated on the quality of silicon wafers.
出处 《电子工业专用设备》 2016年第8期27-29,44,共4页 Equipment for Electronic Products Manufacturing
关键词 清洗技术 花篮 氢氟酸 颗粒度 Cleaning Cassette Hydrofluoric acid particles
  • 相关文献

参考文献7

  • 1闫志瑞.半导体硅片清洗工艺发展方向[J].电子工业专用设备,2004,33(9):23-26. 被引量:15
  • 2WernerKem.半导体晶片清洗[M].北京:电子工业出版社,2012.
  • 3Jeung Ku Kang, Charles B. Msgrave.The mechanism of HF/H20 chemical etching of SiO2[J]. Journal of Chemical Physics, 2002, (116): 275-280.
  • 4张伟才,赵权.抛光片IPA干燥技术研究[J].电子工业专用设备,2013,42(11):22-25. 被引量:3
  • 5刘玉岭,古海云,檀柏梅,桑建新.ULSI衬底硅单晶片清洗技术现况与展望[J].稀有金属,2001,25(2):134-138. 被引量:8
  • 6T. Hoshino, Y. Nishioka. Etching process of SiO2 by HF molecules[J]. Journal of Chemical Physics, 1999, (111 ): 2109-2114.
  • 7G. W. Trucks, Krishnan Raghavachari, G. S. Higashi, et al. Mechanism of HF Etching of Silicon Surfaces: A Theoretical Understanding of Hydrogen Passivation [J]. Physical Review Letters, 1990, (65): 504-507.

二级参考文献11

  • 1IMLautz,K.E. ""Mobile Ion Contamination and Defect Reduction on a Post-Matal Etch Clean Process,"" in Cleaning echnology in Semiconductor Device ManufacturingV, J.Ruzyllo, R.Novak, eds[J]. Electrochem. Soc. Proc., 1998,197 (35): 594-599.
  • 2Park, J.-G,.and J.-H.Han. ""The Behavior of Ozone in Wet Cleaning Chemicala,""in Cleaning Technology in Semiconductor Device ManufacturingV, V, J.Ruzyllo, R.Novak, eds[J]. Electrochem. Soc.Proc., 1998, 197 ( 35 ): 231-242.
  • 3T Ohmi,T.Imaoka,I.Sugiyama,and T.Kenzuka, J.Electrochemical Society, 139,3317,1992. Atsumi, S. Ohtsuka, S.Munehira, and K. Kaijyama, Proc. First international Symp.On Cleaning Technologyin Semiconductor Device Manufacuring, (J. Ruzyllo and R. E. Novak, ed
  • 4Morita,H., J.-I.Ida, T.Ii, and T.Ohmi. Advanced UCT Cleaning Process Based on Specific Gases Dissolved Ultrapure Water [Z]. in 1999 IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings,1999, 453-460.
  • 5Heyns,M,P.W.Mertens,J.Ruzyllo,M.Lee. Advanced Wet and Dry Cleaning Coming Together for Next Generation[J]. Solid State Technol, 1999, 42:37-41.
  • 6侯连武.硅片加工工艺[M].北京:中国有色金属工业总公司职工教育教材编审办公室,1986..
  • 7O Zikanov, W Boos, K Wolke, A. Thess. A model for thermal Marangoni drying [ J ], Journal of Engineering Mathematics, 2001 (4): 250-251.
  • 8In-Soung Chang, Jae-Hyung Kim.Development of clean technology in wafer drying processes[J], Journal of Clean- er Production, 2001 (9): 228-229.
  • 9杨培根.微电子工业中的清洗方法[J].半导体技术,1997,13(4):46-49. 被引量:11
  • 10刘玉岭,刘钠,曹阳.硅单晶片镜面吸附物吸附状态的研究[J].稀有金属,1999,23(2):85-89. 被引量:26

共引文献22

同被引文献8

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部