摘要
The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.
The optical, thermal and electrical properties of ultra-thin two-dimensional （2D） crystal materials are highly related to their thickness. Therefore, identifying the atomic planes of few-layer crystal materials rapidly is crucial to fundamental study. Here, a simple technique was demonstrated based on optical contrast for counting atomic planes （n） of few-layer MoSe2 on SiO2/Si substrates. It is found that the optical contrast of single-layer MoSe2 depends on light wavelength and thickness of SiO2 on Si substrate. The data calculated based on a Fresnel law-based model as well as atomic force microscopy （AFM） mea- surements fit well with the values measured by spectro- scopic ellipsometer. Furthermore, the calculated and measured contrasts were integral and plotted, which can be used to determine the MoSe2 atomic planes （1 ≤ n ≤ 4） accurately and rapidly.
基金
financially supported by the Research Funds of Renmin University of China(Nos.13XNLF02 and 14XNLQ07)
the National Natural Science Foundation of China(Nos.11304381,11004245,11174366 and 51202200)
