摘要
Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.
Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors （GFETs） fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density I DS, improved transconductance g m, reduced sheet resistance lion, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasifree-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.
基金
Supported by the National Natural Science Foundation of China under Grant No 61306006
