半导体532nm虹膜激光治疗药物难控制原发性急性闭角型青光眼急性发作期观察

Effect of semiconductor 532nm laser iridoplasty for the uncontrolled acute attack stage of angle-closure glaucoma with drug

目的:探讨半导体532nm激光周边虹膜成形术在药物控制无效的急性闭角型青光眼急性发作期患者的安全性及有效性。方法:患者13例15眼应用4g/L盐酸奥布卡因滴眼液表面麻醉后立即行半导体532nm激光周边虹膜成形术。术前及术后观察视力、眼压、角膜、前房深度及并发症。结果:虹膜成形术前平均眼压60.6±8.8mmH g(1k Pa=7.5mmH g),术后15min下降至37.4±7.3mmH g,术后60min下降至26.2±6.6mmH g,术后3h下降至平均17.1±5.3mmH g,前房加深。所有患眼角膜水肿全部消退,无明显并发症出现。结论:半导体532nm激光周边虹膜成形术治疗药物难控制性急性发作期原发性闭角型青光眼安全、有效。

AIM：To investigate the efficacy and safety of semiconductor 532 nm laser peripheral iridoplasty in drug control invalid acute satge of angle-closure glaucoma patients.METHODS：Patients with 15 uncontrolled eyes of 13 cases treated by semiconductor 532 nm laser peripheral iridoplasty were recruited into the study.Preoperative and postoperative visual acuity,intraocular pressure,cornea anterior chamber depth and complications were observed.RESULTS：Iridoplasty preoperative intraocular pressure（IOP） averaged 60.6±8.8mmHg（1kPa = 7.5 mmHg）,postoperative 15 min decreased to average 37.4 ±7.3mmHg,postoperative 60 min decreased to average26.2±6.6mmHg,postoperative 3h（17.1±5.3mmHg）.The anterior chamber deepened and visual acuity improved.All patients had corneal edema disappeared.There were no obvious complications.CONCLUSION：Semiconductor 532 nm laser iridoplasty for the uncontrolled acute attack stage of angle-closure glaucoma with drug was safe and effective.