硅材料中锑杂质含量的二次离子质谱检测方法

SIMS measurement method of Sb impurity content in silicon

针对二次离子质谱法测硅材料中锑杂质存在质量数干扰、实验结果不准确的问题,该文对排查干扰离子并消除干扰的方法进行研究。通过对相关样品进行二次离子质谱定量分析、深度剖析和全元素扫描分析,探究硅材料中锑杂质准确定量的最优检测方法。最终结果表明二次离子质谱法对硅中锑杂质浓度的检测限可低至1×1013atoms/cm3,相对标准偏差(RSD,n=10)为10.0%。研究结果对分析二次离子质谱检测中普遍存在的质量数干扰现象有参考价值,排查干扰离子的方法有广泛的适用性。

Mass interference exists and affects the accuracy of the results when using SIMS to detect Sb impurity content in Silicon materials. To solve the problem, methods to determine interfering ions and eliminate the interference were studied. Optimal quantitative method of Sb impurity in Si was explored using SIMS quantitative analysis, depth profile analysis and all elements analysis. The final results show the detection limit of Sb concentration in Silicon by SIMS is 1＆#215;1013 atoms/cm3,and relative standard deviation （RSD,n=10） is 10.0%. This research can be used to analyze the mass interference phenomenon which is general in SIMS detection, and the methods to determine interfering ions is widely applicable.