改进DICE结构的D触发器抗SEU设计

Design of Radiation Hardened D Flip-Flop Based on DICE

基于DICE结构主-从型D触发器的抗辐照加固方法的研究,在原有双立互锁存储单元(DICE)结构D触发器的基础上改进电路结构,其主锁存器采用抗静态、动态单粒子翻转(SEU)设计,从锁存器保留原有的DICE结构。主锁存器根据电阻加固与RC滤波的原理,将晶体管作电阻使用,使得电路中存在RC滤波,通过设置晶体管合理的宽长比,使其与晶体管间隔的节点的电平在SEU期间不变化,保持原电平状态,从而使电路具有抗动态SEU的能力。Spectre仿真结果表明,改进的D触发器既具有抗动态SEU能力,又保留了DICE抗静态SEU较好的优点,其抗单粒子翻转效果较好。

In the paper, the research of master-slave type D flip-flop radiation hardening method facilitates the improvement of circuit structure of the DICE-based type D flip-flop. The master latch adopts the design of anti-static and anti-dynamic SEU while the slave latch retains the original DICE structure. The master latch generates RC filter using transistors as resistance and enables anti-dynamic capability by setting reasonable length/width ratio. The Spectre simulation results show that the improved D flip-flop is equipped with strong anti-dynamic SEU capability and retains good anti-static SEU capability.