摘要
基于CSMC 0.5μm CMOS工艺,设计了一种带曲率补偿的低温漂带隙基准源。采用折叠式共源共栅放大器反馈结构带隙基准源,利用晶体管的VBE与IC的温度特性产生T1n T补偿量,对传统的带隙基准进行曲率补偿。仿真结果表明,在5 V供电电压下,-40~125℃温度范围内,基准电压的波动范围为1.2715~1.2720 V,温漂为3.0×10^(-6)/℃,低频时电路电源抑制比为-86 d B。
The paper proposes a design of a low temperature drift bandgap reference with curvature compensation in CSMC 0.5 μm CMOS process. The circuit adopts conventional bandgap voltage source with folded-cascode amplifier-feedback architecture and generates a T1 n T compensation for conventional bandgap reference. Simulation results show that under the power supply voltage of 5 V and temperature range of-40 ℃to 125 ℃,the output reference voltage is of the range from 1.2715 V to 1.2720 V with a temperature coefficient about 3.0×10^（-6）/℃ and a low frequency power supply rejection ratio of-86 d B.
出处
《电子与封装》
2016年第8期34-36,40,共4页
Electronics & Packaging
关键词
曲率补偿
带隙基准
折叠式共源共栅
curvature compensation
bandgap reference
folded-cascode
