期刊文献+

不同结构多层PZT薄膜的制备及性能特性研究 被引量:1

Research on Preparation and Property of PZT Multilayered Thin Films with Different Structures
下载PDF
导出
摘要 采用相同的工艺分别制备了锆钛酸铅(PZT,r(Zr)/r(Ti)=52/48)与钛酸铅(PT)两种前驱体,并通过溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO2/Si基底上分别制备了PZT,PT/PZT-PZT/PT,PT/PZT/-/PZT/PT 3种不同结构的多层PZT薄膜。利用场发射扫描电子显微镜(FESEM)测试了薄膜的结构,选用XRD分析了薄膜的结晶取向,采用阻抗分析仪测试了薄膜的介电常数、介电损耗及电压-电容曲线,使用铁电性能测试系统测试了薄膜的铁电性。实验结果表明,PT/PZT/-/PZT/PT结构的薄膜相对于其他两种结构的薄膜具有较高的红外探测率与剩余极化强度及较小的介电损耗,具有强大的应用潜能。 Two kinds of PZT(lead zireonate titanate, r(Zr)/r(Ti)= 52/48) and PT(lead titanate) precursors was prepared by using the same process. Multilayer thin films with three different structures of PZT, PT/PZT- PZT/PT and PT/PZT/-/PZT/PT were deposited on Pt/Ti/SiOz/Si substrates by Sol-Gel method. We tested the thin film's structure, crystal orientation, dielectric constant, dielectric loss, voltage-capacitance curve and ferroelec- tric properties by using FESEM, XRD. The results show that PT/PZT/-/PZT/PT multilayer thin film has a high infrared detection rate and the residual polarization, a smaller dielectric loss and a powerful potential applications than the other two kinds of films.
出处 《压电与声光》 CAS CSCD 北大核心 2016年第4期655-658,共4页 Piezoelectrics & Acoustooptics
基金 国家自然科学基金资助项目(51205373 61335008)
关键词 多层锆钛酸铅/钛酸铅(PT/PZT)薄膜 不同结构 压电材料 溶胶-凝胶法 介电性 铁电性 Multilayer PT/PZT thin films different structures piezoelectric materials Sol-Gel method dielec- tric properties ferroeleetric properties
  • 相关文献

参考文献10

  • 1JEGATHEESAN P,YADAV H K,GUPTA V,et al.Composition dependent preferential orientation,dielectric andferroelectric properties of Pb(Zrx Ti1-x)O3thin films derived by Sol-Gel process[J].Materials Letters,2011,65(5):901-904.
  • 2LI D H,LEE E S,CHUNG H W,et al.Comparison of the effect of PLT and PZT buffer layers on PZT thin films for ferroelectric materials applications[J].Applied Surface Science,2006,252(13):4541-4544.
  • 3OISHI K,YONEMARU S,AKAI D,et al.Transient heat transfer analysis of Pb(Zr,Ti)O3thin film infrared sensor using finite element model[J].Aip Publishing,2015,1649(1):47-51.
  • 4CHENG J,HE L,CHE L,et al.Lead zirconate titanate thin films prepared on metal substrates by the Sol-Gel methods[J].Thin Solid Films,2006,515(4):2398-2402.
  • 5LAISHRAM R,THAKUR O P.Nanostructured PZT/PT multilayered thin films prepared by Sol-Gel process[J].Materials Letters,2014,137:49-51.
  • 6PRABU M,SHAMEEM BANU I B,GOBALAKRISHNAN S,et al.Electrical and ferroelectric properties of undoped and La-doped PZT(52/48)electroceramics synthesized by Sol-Gel method[J].Journal of Alloys and Compounds,2013,551:200-207.
  • 7JEGATHEESAN P,GIRIDHARAN N V.Enhanced electrical properties of PZT thick films prepared by SolGel technique throughstep-by-step crystallization process[J].Journal of Materials Science:Materials in Electronics,2012,23(5):1103-1107.
  • 8LEE W G,KWON Y J.Preparation of ferroelectric PZT thin films by plasma enhanced chemical vapor deposition using metalorganic precursors[J].Journal of Industrial and Engineering Chemistry,2008,14(1):89-93.
  • 9WANG Y K,TSENG T Y,LIN P.Enhanced ferroelectric properties of Pb(Zr0.53Ti0.47)O3thin films on SrRuO3/Ru/SiO2/Si substrates[J].Applied Physics Letters,2002,80(20):3790-3792.
  • 10KHAENAMKAEW P,MUENSIT S,BDIKIN I K,et al.Effect of Zr/Ti ratio on the microstructure and ferroelectric properties of lead zirconate titanate thin films[J].Materials Chemistry and Physics,2007,102(2/3):159-1640.

同被引文献5

引证文献1

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部