摘要
采用相同的工艺分别制备了锆钛酸铅(PZT,r(Zr)/r(Ti)=52/48)与钛酸铅(PT)两种前驱体,并通过溶胶-凝胶(Sol-Gel)法在Pt/Ti/SiO2/Si基底上分别制备了PZT,PT/PZT-PZT/PT,PT/PZT/-/PZT/PT 3种不同结构的多层PZT薄膜。利用场发射扫描电子显微镜(FESEM)测试了薄膜的结构,选用XRD分析了薄膜的结晶取向,采用阻抗分析仪测试了薄膜的介电常数、介电损耗及电压-电容曲线,使用铁电性能测试系统测试了薄膜的铁电性。实验结果表明,PT/PZT/-/PZT/PT结构的薄膜相对于其他两种结构的薄膜具有较高的红外探测率与剩余极化强度及较小的介电损耗,具有强大的应用潜能。
Two kinds of PZT(lead zireonate titanate, r(Zr)/r(Ti)= 52/48) and PT(lead titanate) precursors was prepared by using the same process. Multilayer thin films with three different structures of PZT, PT/PZT- PZT/PT and PT/PZT/-/PZT/PT were deposited on Pt/Ti/SiOz/Si substrates by Sol-Gel method. We tested the thin film's structure, crystal orientation, dielectric constant, dielectric loss, voltage-capacitance curve and ferroelec- tric properties by using FESEM, XRD. The results show that PT/PZT/-/PZT/PT multilayer thin film has a high infrared detection rate and the residual polarization, a smaller dielectric loss and a powerful potential applications than the other two kinds of films.
出处
《压电与声光》
CAS
CSCD
北大核心
2016年第4期655-658,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(51205373
61335008)