适于16纳米及以下的器件和电路的集成工艺基础研究

Basic Research of Devices and Circuits Integrated Process for 16 nm Technology Node and Below

该研究2013年度主要围绕研究高迁移率半导体表面态及钝化机理,探索热力学稳定的高k栅介质材料方面,主要开展解决等效氧化层厚度表征,金属栅功函数的调制、沟道迁移率的下降以及高k栅介质的可靠性等相关问题,并实现器件质量的高k介质材料与高迁移率沟道材料的集成。

The main issue surrounding the 2013 annual study of high mobility semiconductor surface states and passivation,mechanism,exploratio n thermodynamically stable high- k gate dielectric materials, mainly carried out to solve the equivalent oxide thickness characterization, modulation, channel mobility metal gate work function integrated decline and reliability of high- k gate dielectric related issues, and to achieve device quality high-k dielectric material with high mobility channel materials.