摘要
详细地研究了溅射压强对a-IGZO薄膜的微结构和电学特性产生的影响。AFM分析表明,薄膜的表面粗糙度随溅射压强的增加而增大。XPS分析表明薄膜中氧空位含量随溅射压强的增加而减少。增加表面粗糙度和减少氧空位对a-IGZO薄膜晶体管的特性有着决定性的作用。当溅射压强保持在0.6 Pa时,得到的薄膜晶体管的特性最佳,电子的饱和迁移率和门限电压分别是3.32 cm^2/(V·s)和24.6 V。溅射压强是磁控溅射制备IGZO薄膜及其晶体管的关键影响因素。
Thin films of amorphous indium gallium zinc oxide amorphous indium-gallium-zinc-oxide（a-IGZO） were fabricated by DC magnetron sputtering.The influence of sputtering pressure on the microstructures and the electronic properties were investigated.AFM characterization on surface morphology demonstrates that the surface roughness increases with higher sputtering pressure.The oxygen vacancies of the a-IGZO films change considerably and are reduced significantly with increasing sputtering pressure,as disclosed by X-ray photoelectron spectroscopy.Both the increased surface roughness and reduced oxygen vacancy are detrimental to the performance of a-IGZO TFTs.From this point of view,the sputtering should be done at a proper pressure of 0.06 Pa in order to ensure the enhanced performance.The electron saturation mobility（μ_（sat）） and the threshold voltage（V_（TH）） of the a-IGZO TFTs are 3.32 cm^2/（V·s） and 24.6 V at such a sputtering condition,respectively.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2016年第8期1992-1996,共5页
Rare Metal Materials and Engineering
基金
National Natural Science Foundation of China(61372018)
