摘要
基于SMIC 0.18μm CMOS工艺,设计了一种低温漂超低功耗的带隙基准电压源。采用无电阻电路结构,使基准电压源具有了超低功耗性能。基于分段线性电流模技术,引入滤波电容,极大地降低了温漂系数,稳定了输出电压。利用Cadence Spectre EDA软件,对电路进行设计和仿真。结果表明,在-50℃~100℃温度范围内,温漂系数仅为2.9×10^(-6)/℃。在0.99~3V的电压范围内具有稳定的基准输出。在1kHz频率下电源抑制比为-71.28dB。整个带隙基准源的功耗仅为185.9nW。
A low temperature-drift and ultra low power bandgap voltage reference based on SMIC 0.18μm CMOS process was designed.The bandgap voltage reference adopt a new structure with no resistance,which made the reference voltage have ultra low power consumption.Based on the technology of subsection current mode,the circuit used a filter capacitor to greatly reduce the temperature drift and to stabilize the output voltage.The design and simulation were conducted by Cadence Spectre EDA.The simulation results demonstrated that the temperature coefficient was only 2.9 ×10^-6/℃ at the temperature range from-50 ℃ to 100 ℃.It could work steadily in a supply voltage range from 0.99 Vto 3V.The power supply rejection ratio was-71.28 dB at 1kHz.The power consumption of the whole bandgap reference source was only 185.9nW.
出处
《微电子学》
CAS
CSCD
北大核心
2016年第4期458-462,共5页
Microelectronics
关键词
带隙基准
电流模
温漂
功耗
Bandgap voltage
Current mode
Temperature drift
Power consumption
