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CMP抛光界面温度的在线检测 被引量:1

The On-line Detection of Polishing Interface Temperature in CMP
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摘要 介绍了化学机械抛光过程中监控抛光界面温度的重要性。总结了其他学者对抛光界面温度的检测方法,并分析每种方法的优缺点。设计了一种抛光界面温度在线检测装置,介绍了它的结构和组成该装置的各元件型号及性能。进行了不同抛光压力、抛光盘转速和抛光液流量的CMP试验,并利用该装置检测各情况下的抛光界面温度变化。为了进一步地说明该装置的有效性,将抛光液流量为20m L/min时的温度检测结果与仿真结果对比,六组对比数据都十分接近,同时也验证了该计算方法的有效性。提出了将该温度检测装置应用于判断抛光过程是否正常以及某些工件的抛光终点检测的想法。 The importance of monitoring the temperature on the polishing interface in the process of chemical mechanical polishing was introduced. The detection methods for polishing interface temperature of other scholars were summarized,and the advantages and disadvantages of each method were analyzed. Thus we designed an on-line polishing interface temperature detection device,and introduced its structure and the model and performance of the various components that form the device. The CMP experiments of different polishing pressure,polishing plate rotational speed and polishing slurry flowrate were carried out,and the device was used to detect the change of temperature at the same time. In order to further illustrate the effectiveness of the proposed device,the test results of the polishing slurry flowrate for 20 m L / min was compared with the simulation results,and the six groups of comparative data were very close,which also verified the validity of the calculation method. Applying the temperature detection device to determining whether the polishing process is normal and detecting the polishing end point of some workpieces was proposed in this paper.
出处 《组合机床与自动化加工技术》 北大核心 2016年第8期42-45,共4页 Modular Machine Tool & Automatic Manufacturing Technique
基金 国家自然科学基金项目(51175092) 教育部高校博士学科专项科研基金项目(20104420110002) 广东省自然科学基金项目(10151009001000036) 广东省科技计划项目促进科技服务业发展专项计划(2010A040203002) 省部产学研结合科技创新平台资助(2011A091000002)
关键词 化学机械抛光 温度 在线 检测 chemical mechanical polishing interface temperature detection
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参考文献13

  • 1杨向东,魏昕,谢小柱,胡伟.超薄不锈钢基板化学机械抛光运动机理分析[J].组合机床与自动化加工技术,2015(5):27-30. 被引量:4
  • 2Borucki L, Li Z, Philipossian A. Experimental and Theoret- ical Investigation of Heating and Convection in Copper Polis- hing [ J ]. Journal of The Electrochemical Society, 2004,151 (9) : G559.
  • 3Chiou H W, Chen L J. Temperature compensated chemical mechanical polishing to achieve uniform removal rates:U S, S,873,769 [ P]. 1999 - 02 - 23.
  • 4孙振杰,刘涛,费玖海.化学机械抛光(CMP)过程中抛光盘温度控制的分析研究[J].电子工业专用设备,2011,40(8):5-8. 被引量:5
  • 5杨涛,赵超,李俊峰.化学机械抛光设备及其预热方法:中国,20101059-9278.7[P].2010-12-21.
  • 6White D, Melvin J, Boning D. Characterization and Model- ing of Dynamic Thermal Behavior in CMP [ J ]. Journal of The Electrochemical Society, 2003,150 (4) : G271.
  • 7Hocheng H. Kinematic Analysis and Measurement of Tem- perature Rise on a Pad in Chemical Mechanical Planarization [J]. Journal of The Electrochemical Society, 1999, 146 (11) :4236.
  • 8Borucki L, Li Z, Philipossian A. Experimental and Theoret- ical Investigation of Heating and Convection in Copper Polis- hing[ J]. Journal of The Electrochemical Society, 2004,151 (9) :G559.
  • 9Li Z, Borucki L, Koshiyama I, et al. Effect of Slurry Flow Rate on Tribological, Thermal, and Removal Rate Attributes of Copper CMP[ J]. Journal of The Electrochemical Society, 2004,151 (7) : G482.
  • 10Sampurno Y A, Borucki L, Zhuang Y, et al. A Method for Direct Measurement of Substrate Temperature during Copper CMP[J]. Journal of The Electrochemical Society, 2005, 152(7) : G537.

二级参考文献33

  • 1黄真理,李玉梁,余常昭,宋传琳.LIF技术测量浓度场的影响因素分析[J].实验力学,1994,9(3):232-240. 被引量:8
  • 2王娟,檀柏梅,赵之雯,李薇薇,周建伟.蓝宝石衬底片的抛光研究[J].电子工艺技术,2005,26(4):228-231. 被引量:13
  • 3赵之雯,牛新环,檀柏梅,袁育杰,刘玉岭.蓝宝石衬底材料CMP抛光工艺研究[J].微纳电子技术,2006,43(1):16-19. 被引量:18
  • 4H.L.Zhu, L.A.Tessaroto, R. Sabia.Chemical mechanical polishing (CMP) anisotropy in sapphire [J]. Applied Surface Science, 2004, 236(1-4): 120-130.
  • 5John Schuler. CMP Technology and Markets[J]. SEMICON China 99 Technical Symposium, Beijing, China, 1999:7-18.
  • 6Jairath R, Farkas J. Manufacturability of the CMP Process[J]. Thin Solid Films, 1995, 270: 612-615.
  • 7Michael A. Fury. The early days of CMP[J]. Solid State Technology, 1997, 40 (5): 81-86.
  • 8Martinez M A. A year later, CMP market has grown even hotter[J]. Solid State Technology, 1995, 38 (9): 44.
  • 9Fury M A. Emerging developments in CMP for Semiconductor Planarization[J]. Solid State Technology, 1995, 38 (4): 47.
  • 10Joseph H. Tylczak and Albany Oregon. friction, lubrication and wear technology[M]. ASM Handbook 18,1990,184.

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