基于LDMOS器件的高功率宽带小型化功率放大器

High Power Broadband and Miniaturized Power Amplifier Base on LDMOS Transistor

相对于双极型Si功率器件,LDMOS功率器件在增益、线性度、可靠性等方面具有明显的优势而且成本较低。理论分析表明,固态雷达发射系统应用该功率器件可以减轻发射系统的重量和减小体积,提高输出功率和功率密度。本文依据相控阵雷达实际需求,利用LDMOS功率器件设计出一款P波段1000W高功率宽带小型化功率放大器。通过设计宽带输入、输出匹配网络实现放大器宽带工作(相对工作带宽50%),通过小型化紧凑电路设计和减重设计减小功率放大器体积和减轻重量,实现功放模块体积小(55×95mm)、重量轻(120g)的设计要求,通过漏极调制电路提高功率放大器的效率。实测结果与传统Si器件功率放大器相比,该功率放大器具有高输出功率及功率密度、体积小、重量轻、工作带宽宽的特点。

In this paper, the specification and performance of the LDMOS power device is presented. Compared with Si power device, it has remarkable advantages such as low-cost, high-gain, high linearity, better thermal stability and high reliability, etc. A 1000W LDMOS power amplifier was designed in P band. The saturated output power is 1000W with small size（55×95 mm） ,light weights（ 120 g） and broadband from f0 to 1.6fo. The efficiency of amplifier was improved by drain modulation circuit. The characteristics of the amplifier are compact size, lightweight, broadband, high power and high power density.