摘要
因石墨烯独特的结构和优异的性能,自发现以来一直是研究的热点。以铜箔为基底的化学气相沉积(CVD)法是目前制备石墨烯的一种重要方法。文章综述了石墨烯的主要制备方法及其存在的优缺点;对石墨烯以铜基底化学气相沉积法的生长机理、最新研究进展及在多个领域的应用前景进行了分析。
Graphene has unique structure and excellent properties. It has concerned many researchers since it has been found. Chemical vapor deposition (CVD) growth of graphene on copper foil substrate is being widely studied as an important method to prepare this material currently. This paper reviewed the main preparation methods, including their advantages and disadvantages. Also, the mechanism of graphene grown on copper substrate by chemical vapor deposition, the latest research progress and application filed of graphene were stated in this paper.
出处
《印制电路信息》
2016年第9期36-42,共7页
Printed Circuit Information
关键词
铜箔
石墨烯
化学气相沉积
综述
Copper Foil
Graphene
Chemical Vapor Deposition
Review