期刊文献+

卫星扩频应答机抗单粒子翻转技术研究 被引量:5

The anti-SEU technology of satellite-borne spread-spectrum transponder
下载PDF
导出
摘要 对卫星扩频应答机抗单粒子效应的方法进行分析,设计了采用反熔断丝工艺的FPGA(A54SX32),通过回读比对功能对FPGA进行监控和处理。此方法大大降低了单粒子效应造成卫星扩频应答机发生功能性故障的可能性,并在系统中通过内部高可靠单机对易发生单粒子效应的扩频应答机进行监控,诊断出故障后进行修复,同时设计定时复位对应答机进行复位、开机操作,确保卫星在轨扩频应答机的正常稳定工作。 The satellite-borne spread spectrum transponder against SEU effect is analyzed, and a method which uses FPGA under an anti-fuse technique is designed, namely A54SX32, with a function of read back and realignment to monitor and handle FPGA. By means of that, the probability of functional faults caused by SEU effect on the satellite-borne spread-spectrum transponder will be considerably reduced. The spread spectrum transponder, which is prone to SEU effect, will be monitored by highly reliable standalone unit in the system, and the fault will be diagnosed and fixed. In addition, a watchdog timer is designed to reset and start up the transponder, so as to ensure a smooth operation of the on-orbit satellite-borne spread-spectrum transponder.
出处 《航天电子对抗》 2016年第4期52-55,共4页 Aerospace Electronic Warfare
关键词 扩频应答机 FPGA 单粒子翻转 spread-spectrum transponder FPGA SEU
  • 相关文献

参考文献6

二级参考文献30

  • 1邢克飞,杨俊,王跃科,肖争鸣,周永彬.Xilinx SRAM型FPGA抗辐射设计技术研究[J].宇航学报,2007,28(1):123-129. 被引量:51
  • 2Monolithic 16 Mrad hard SRAM design datasheet [ K]. Aeroflex, 2009.
  • 3HX6408 512 × 8 STATIC RAM datasheet [K]. Honeywell International Inc, 2008.
  • 4WANG W. RC hardened FPGA configuration SRAM cell design [ J ]. IEE Electronics Letters, 2004, 40 (9) : 525 - 526.
  • 5GASIOT G, GIOT D, ROCHE P. Alpha-induced multiple cell upsets in standard and radiation hardened SRAMs manufactured in a 65 nm CMOS technology [ J]. IEEE Transactions on Nuclear Science, 2006, 53 (6) : 3479 - 3586.
  • 6LYSINGER M, ROCHE P, ZAMANIAN M, et al. A radiation hardened nano-power 8 Mb SRAM in 130 nm CMOS [ C ] // Proceedings of International Symposium on Quality Electronic Design. San Jose, CA, USA, 2008 : 23 - 29.
  • 7CALLIGARO C, LONERALI V, STABILE A. A radiation hardened 512 kbit SRAM in 180 nm CMOS technology [ C ] // Proceedings of the 16^th IEEE International Conference on Electronics, Circuits, and Systems. Yasmine Hammamet, Tunisia, 2009 : 655 - 658.
  • 8SHIYANOVSKII Y, WOLFF F, PAPACHRtSTOU C. SRAM cell design protected from SEU upsets [ C ] ff Proceedings of the 14^th IEEE International on-Line Testing Symposium. Rhodes, Greece, 2008 : 169 - 170.
  • 9NOWLIN R N, BEGAY C S, PARKER R R, et al. Radiation hardness of hardened-by-design SRAMs in commercial foundry technologies [ C ] // Proceedings of 2006 IEEE Radiation Effects Data Workshop. Ponte Vedra, FL, USA, 2006:136 - 143.
  • 10OLSON B D, BALL D R, WARREN K M, et al. Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design [ J ]. IEEE Transactions on Nuclear Science, 2005, 52 (6) : 2132 -2136.

共引文献73

同被引文献29

引证文献5

二级引证文献13

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部