漏/阻双模高性能D波段无源混频器

High performance D-band passive mixer in dual drain/resistive modes

介绍一种基于70nm砷化镓变晶性高电子迁移率晶体管(mHEMT)工艺的漏/阻双模、高性能D波段无源混频器.该单片集成基波混频器采用共面波导(CPW)实现.为了保证电路高频设计的准确性,对共面波导进行电磁场仿真建模.采用谐波平衡法对漏极、阻性2种状态的端口大信号阻抗进行仿真分析,设计出射频(RF)和本振(LO)信号共用的匹配网络.测试结果表明:在漏极状态下,当射频频率从110GHz变化到150GHz、中频频率固定为1GHz、本振信号功率设置为3dBm时,转换增益位于-4.4^-11.6dB;在阻性状态下,当射频频率从110GHz变化到150GHz、中频频率固定为1GHz、本振信号功率设置为0dBm时,转换增益位于-8.0^-18.6dB.包含焊盘在内,芯片面积为0.86mm×0.43mm.

The design and characterization of a high performance D-band dual drain/resistive modes mixer were presented, which was in a 70 nm GaAs metamorphic high electron mobility transistor （mHEMT） process. The monolithic single-ended fundamental mixer was fabricated in coplanar waveguide （CPW） technology. CPWs were modeled by the full-wave electromagnetic field simulation to ensure the accuracy of high-frequency design. Matching networks were designed for both radio frequency （RF） and local oscil-lator （LO） signals according to the large signal impedance of dual drain/resistive models simulated by har-monic balance method. As indicated, for drain mode, a conversion gain over the 110 to 150 GHz frequency range was measured between -4. 4 and -11. 6 dB with intermediate frequency （IF） targeted at 1 GHz and LO power fixed of 3 dBm. In case of resistive mode, the proposed mixer performed a conversion gain from -8.0 to -18. 6 dB for a wide operational bandwidth from 110 to 150 GHz, under 1 GHz IF frequency and 0 dBm LO power. The compact chip size is 0. 86 mm × 0. 43 mm with pads included.