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Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires

Room-temperature ferromagnetism observed in Nd-doped In_2O_3 dilute magnetic semiconducting nanowires
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摘要 Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^(3+)-vacancy complexes through percolation-bound magnetic polarons. Nd-doped In_2O_3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method.Nd atoms were successfully doped into the In_2O_3 host lattice structure,as revealed by energy dispersive x-ray spectroscopy,x-ray photoelectron spectroscopy,Raman spectroscopy,and x-ray diffraction.Robust room temperature ferromagnetism was observed in Nd-doped In_2O_3 nanowires,which was attributed to the long-range-mediated magnetization among Nd^(3+)-vacancy complexes through percolation-bound magnetic polarons.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第9期556-560,共5页 中国物理B(英文版)
基金 Project supported by the National Natural Science Foundation of China(Grant No.11274003) the Priority Academic Program Development of Jiangsu Higher Education Institutions,China the Fundamental Research Funds for the Central Universities,China
关键词 dilute magnetic semiconductor nanowires ferromagnetism oxide dilute magnetic semiconductor nanowires ferromagnetism oxide
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