接近式光刻中基于条纹相位解析的掩模硅片面内倾斜校正研究

Tilt correction in the plane between mask and wafer based on fringe phase analysis in proximity nanolithography

针对接近式光刻中掩模硅片面内倾斜提出一种条纹相位解析方法。该方法通过2D傅里叶变换结合2D汉宁窗对于掩模硅片在面内发生的倾斜而形成的倾斜条纹进行处理,获得掩模硅片在面内的倾斜角度,进而进行倾斜校正。数值模拟与实验验证了该方法的可行性与有效性。结果表明,该方法能准确获得掩模硅片在面内的倾斜角度并进行校正。

The fringe pattern phase analysis method is proposed for the tilt correction in the plane between mask and wafer in proximity lithography.The tilt between mask and wafer in the plane is reflected in the tilted fringe pattern.The method combining the 2D Fourier transform and 2D Hanning window is proposed for processing the tilted fringe pattern.The angles in the plane of tilt are extracted through phase analysis and the tilts are corrected.Computer simulation and experiment are both performed to verify this method.The results indicate that the tilt of the mask and wafer in the plane can be extracted with high accuracy through this method.