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Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning 被引量:1

Synergetic effect of chelating agent and nonionic surfactant for benzotriazole removal on post Cu-CMP cleaning
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摘要 The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a crit- ical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance. The cleaning of copper interconnects after chemical mechanical planarization (CMP) process is a crit- ical step in integrated circuits (ICs) fabrication. Benzotriazole (BTA), which is used as corrosion inhibitor in the copper CMP slurry, is the primary source for the formation of organic contaminants. The presence of BTA can degrade the electrical properties and reliability of ICs which needs to be removed by using an effective cleaning solution. In this paper, an alkaline cleaning solution was proposed. The alkaline cleaning solution studied in this work consists of a chelating agent and a nonionic surfactant. The removal of BTA was characterized by contact angle measurements and potentiodynamic polarization studies. The cleaning properties of the proposed cleaning solution on a 300 mm copper patterned wafer were also quantified, total defect counts after cleaning was studied, scanning electron microscopy (SEM) review was used to identify types of BTA to confirm the ability of cleaning solution for BTA removal. All the results reveal that the chelating agent can effectively remove the BTA residual, nonionic surfactant can further improve the performance.
出处 《Journal of Semiconductors》 EI CAS CSCD 2016年第8期97-102,共6页 半导体学报(英文版)
基金 supported by the Natural Science Foundation of Hebei Province,China(No.F2015202267) the Scientific Innovation Grant for Excellent Young Scientists of Hebei University of Technology(No.2015007)
关键词 post Cu-CMP alkaline cleaning solution BTA removal chelating agent nonionic surfactant post Cu-CMP alkaline cleaning solution BTA removal chelating agent nonionic surfactant
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