摘要
We demonstrate the generation of Q-switched pulses from an ytterbium-doped fiber laser（YDFL） using quantum dot（QD） CdSe as a passive saturable absorber（SA）. The CdSe QD is fabricated by the synthesis of CdO,Se, and manganese acetate and paraffin oil and oleic acid as the solvent and surfactant, respectively. The CdSe QD is then doped into poly-methyl-methacrylate（PMMA） via an emulsion polymerization process. A PMMAhosted CdSe QD thin flake with a homogeneous end surface is then formed and placed between two ferrules and assembled in a YDFL cavity to achieve the Q-switching operation with a repetition rate of 24.45 to 40.50 kHz while varying the pump power from 975 to 1196 mW. The pulse width changes from 6.78 to 3.65 μs with a maximum calculated pulse energy at 0.77 μJ at a pump power of 1101 mW. This work may be the first demonstration of CdSe QD-based Q-switching in an all-fiber configuration that should give proportional insight into semiconductor QD materials in photonics applications.
We demonstrate the generation of Q-switched pulses from an ytterbium-doped fiber laser（YDFL） using quantum dot（QD） CdSe as a passive saturable absorber（SA）. The CdSe QD is fabricated by the synthesis of CdO,Se, and manganese acetate and paraffin oil and oleic acid as the solvent and surfactant, respectively. The CdSe QD is then doped into poly-methyl-methacrylate（PMMA） via an emulsion polymerization process. A PMMAhosted CdSe QD thin flake with a homogeneous end surface is then formed and placed between two ferrules and assembled in a YDFL cavity to achieve the Q-switching operation with a repetition rate of 24.45 to 40.50 kHz while varying the pump power from 975 to 1196 mW. The pulse width changes from 6.78 to 3.65 μs with a maximum calculated pulse energy at 0.77 μJ at a pump power of 1101 mW. This work may be the first demonstration of CdSe QD-based Q-switching in an all-fiber configuration that should give proportional insight into semiconductor QD materials in photonics applications.
