SiC颗粒化学镀铜工艺研究

Study on Technics of Electroless Copper Plating on SiC Particle

化学镀铜在生产中应用比较广泛,但是在化学镀铜过程中的活化工艺所需试剂有毒,并且价格较为昂贵。探讨了取消化学镀铜过程中的活化工艺后,其他工艺条件对SiC镀铜效果的影响规律。经实验分析,获得了化学镀铜实验优化工艺参数为：化学镀铜溶液温度为35℃,溶液p H值用氢氧化钠调节至12~13,硫酸铜加入量为12 g/L,甲醛加入量为28 ml/L,酒石酸钾钠加入量为40 g/L,经过一定时间在碳化硅表面得到了良好的铜镀层。通过X射线衍射仪及扫描电镜检测,结果表明：取消了活化工艺后,在碳化硅表面仍然得到了较好的铜包覆层。

Chemical copper plating is widely applied in the production, but the reagent used in activation technology is toxic and expensive. The paper discussed the influence of the rule of other process conditions of electroless plating on SiC copper plating effect. The optimal process parameters of experiment by analyzing was that electroless copper plating solution temperature was 35℃, the pH value of the solution was adjusted to 12 - 13 with sodium hydroxide, the amount of copper sulfate added to 12 g/L, the amount of formaldehyde added to 28 ml/L, sodium potassium tartrate added in an amount of 40 g/L, after a certain time, we will get a good copper plating layer on the silicon carbide surface. By EDS analysis and scanning electron microscopy （SEM） testing, the results show that the surface of the silicon carbide still gets the better copper plating layer without the activation process.