1200 V 4H-SiC JBS二极管的研制

Study and Fabrication of 1200 V 4H-SiC JBS Diode

通过理论分析与计算机仿真方法对1 200 V 4H-碳化硅(SiC)结势垒肖特基(JBS)二极管进行了设计与研究,实现了1 200 V/2 A,1 200 V/5 A及1 200 V/30 A三种等级管芯的研制。鉴于非均匀场限环(FLR)保护效率存在对工艺偏差敏感的问题,所设计各电流等级的管芯均采用均匀FLR作为终端结构。经测试,所研制管芯在反偏压为1 200 V时,漏电流均不大于3μA,且1 200 V/2 A,1 200 V/5 A及1 200 V/30 A三种等级管芯的通态电阻分别为790mΩ,360 mΩ及59.3 mΩ。

The article carries out the design and study on 1 200 V 4H-silicon carbide（SiC） junction barrier schottky（JBS） diode through theory and simulation.The 4H-SiC JBS diodes with 1 200 V/2 A, 1 200 V/5 A, and 1 200 V/30 A classes are fabricated.As the non-uniform field limiting rings（FLR） are sensitive to process deviation, uniform FLR are used as terminal structure.According to testing results of the fabricated diodes, the leakage current of the fabricated diodes at a reverse bias of 1 200 V are all bellow 3 pLA, and the on-resistance of 1 200 V/2 A, 1 200 V/5 A, and 1 200 V/30 A classes diodes are 790 mΩ, 360 mΩ and 59.3 mΩ respectively.