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IGBT功率模块瞬态热阻抗测量方法研究 被引量:8

Research on Transient Thermal Impedance Measurement Method of IGBT Power Module
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摘要 绝缘栅双极型晶体管(IGBT)的瞬态热阻抗曲线可表征器件的退化状态,对器件损伤、寿命预测等研究有重大的意义。提出了基于光纤测温法测量瞬态热阻抗的方法,可实时获取器件的准确结温,计算得到的瞬态热阻抗曲线能反映器件的退化状态,更接近器件的实际热阻。分别对用光纤测量法和热敏参数法测得的瞬态热阻抗曲线进行比较,证明了光纤测量方法准确可行。 Transient thermal impedance curves of insulated gate bipolar transistor(IGBT) can characterize the device state of degradation, have great significance to research on damage and life prediction of device.A temperature measurement method of measuring transient thermal impedance based on optical fiber is proposed, can access to device junction temperature accurately on real-time, and the transient thermal impedance curve calculated can reflect the sate of device degradation.The optical measurement method has been proved accurate and feasible by comparing the re- suits of optical fiber measurement method and thermosensitive parameter(TSP) method.
机构地区 河北工业大学
出处 《电力电子技术》 CSCD 北大核心 2016年第9期103-105,共3页 Power Electronics
基金 国家自然科学基金(51377044) 2012年度高校博士点专项科研基金(20121317110008)~~
关键词 绝缘栅双极型晶体管 瞬态热阻抗 光纤测温法 insulated gate bipolar transistor transient thermal impedance optical fiber measurement method
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