摘要
为了计算雷击GIS单相套管外引线时,GIS外壳暂态电位升高,建立了GIS电路模型。利用电磁场理论和多导体传输线理论提取了GIS主要元件参数,建立了GIS主要元件的电路模型。以某220 kV GIS智能开关设备为研究对象,计算了智能组件传感器安装处GIS外壳TEV,并进行了试验验证。所得的仿真结果为下一步智能组件端口骚扰电压的研究提供基础。
In order to calculate the transient enclosure voltage（TEV） rise caused by lightning strike on single phase bushing of GIS, this paper establishes the circuit model of GIS. In this model, the electromagnetic field theory and the theory of multi-conductor transmission line is not only utilized to extract parameters of GIS main components, but also used to establish circuit model of main elements.Taking a 220 kV GIS intelligent switch equipment as research object, TEV of GIS is calculated where intelligence component＇s sensor is installed. The result is verified by experiments. The simulation results provide a basis for research of intelligent component＇s disturbance voltage.
出处
《高压电器》
CAS
CSCD
北大核心
2016年第9期61-64,共4页
High Voltage Apparatus
