摘要
以重掺杂Si片为衬底,SiO_2为栅绝缘层,并五苯为有源层,制备了有机场效应晶体管(OFETs),研究了空气中水汽对场效应性能的影响。实验表明:当器件较长时间放置在空气中时,吸附在并五苯和SiO_2接触面之间的水分子导致阈值电压漂移,器件的稳定性降低;经过热处理的器件的阈值电压漂移现象消失。提出了解释阈值电压漂移现象的模型,该模型可解释水分子在这个过程中所起的作用。
Pentacene-based organic field-effect transistors (OFETs) is fabricated with n-doped silicon substrate as the gate electrode and as the dielectric. The influence of ambient atmosphere on the threshold voltage of organic field-effect transistors is studied. The adsorption of the pentacene-interface largely affects the electri- cal characteristics of the OFETs, where a shift is clearly present. It can be eliminated through the thermal an- nealing processes, a new model to interpret the shift of threshold voltage is presented, this model also explains the role of water in the device.
出处
《中原工学院学报》
CAS
2016年第4期33-36,共4页
Journal of Zhongyuan University of Technology
基金
国家自然科学基金项目(11547221)
关键词
有机场效应晶体管
并五苯
阈值电压漂移
热处理
OFETs
pentacene
the threshold voltage shift
the thermal annealing processes