摘要
The widely used deep level transient spectroscopy（DLTS） theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling（DLTSDP） is proposed. Based on the relationship of its transition free energy level（TFEL） and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory.
The widely used deep level transient spectroscopy（DLTS） theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling（DLTSDP） is proposed. Based on the relationship of its transition free energy level（TFEL） and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory.
基金
the China Triumph International Engineering Company (CTIEC), Shanghai, China, which offered generous financial support for this work
