摘要
sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.
sSi/Si_（0.5）Ge_（0.5）/sSOI quantum-well（QW） p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_（0.5）Ge_（0.5）QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.
基金
Project supported by the National Natural Science Foundation of China(Nos.61306126,61306127,61106015)
the CAS International Collaboration and Innovation Program on High Mobility Materials Engineering
