埋氧层内应力对微悬臂梁加工断裂的影响机理研究

Research of Mechanism of Buried Oxide Layer Stress Impact on the Micro-cantilever Processing Breakage

研究了在Smart-cut方法下制作的SOI硅片中热应力产生的来源,以及热应力的分布、数值和范围。对微悬臂梁制作过程的几个阶段进行了建模,通过仿真,探讨了不同热应力对微悬臂梁制作过程产生的影响,并在ANSYS软件中对优化的加工工艺可行性的仿真和制作时断裂现象进行了验证。研究了SOI中埋氧层内应力影响微纳加工工艺的机理,特别针对内应力使微悬臂梁制备产率下降的副作用进行了分析。研究结果在基于SOI制造的微传感器领域中具有重要的作用。

Report the source that thermal stress generates, and in particular, determine the distribution, the value and the range of the stress in silicon-on-insulator （SOD wafer made from smart-cut method. Explore the effect under the presence of different thermal stress during micro cantilever producing progress by simulation, involving the modeling of different fabrication of cantilevers. ANSYS emulation of the feasibility accordingly and verification of breakage is done in different fabrication process. Systematically study the mechanism of how SOI buried oxide layer stress influence the micro-fabrication progress, especially on the cantilever structure. The results play an important role in the area of micro-sensor based on SOI production.