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Ka波段高功率放大器设计 被引量:3

Design of Ka-band High Power Amplifier
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摘要 微波单片集成电路(Microwave Monolithic Integrated Circuit,MMIC)以其体积小型紧凑、一致性好、可靠性高、成品率高、适用于批量生产等特点,在微波通信系统中得到广泛的应用。基于Ga As赝配高电子迁移率晶体管,采用功率合成技术和阻抗匹配技术设计了一款Ka波段功率放大器,对电路进行了仿真分析,并进行流片。实测结果表明电路工作频率从36~38 GHz频段范围,P1d B输出功率大于35 d Bm,增益大于18 d B,功率附加效率为16%。 The microwave monolithic integrated circuit (MMIC) has such features as small volume, good consistency, high reliability, high finished product rate,batch production suitability, etc.So it is widely used in the microwave communication system.Based on the GaAs pseudomrphie high electron mobility transistor,a Ka band power amplifier is designed by using power synthesis and imped- ance matching techniques.The simulation analysis is performed for circuit, and the results show that the working frequency range is within 36-38 GHz,the p ldB output power is higher than 35 dBm, the gain is higher than 18 dB, and the power added efficiency is 16%.
出处 《无线电通信技术》 2016年第5期64-67,74,共5页 Radio Communications Technology
关键词 高功率放大器 单片微波集成电路 KA波段 匹配网络 high power amplifier MMIC Ka band matching network
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