一种磁控忆感模拟器的设计及其特性分析

Design and Characteristic Analysis for a Flux-Controlled Meminductor Emulator

记忆器件的出现为电路设计提供了新的方法,由于目前尚无法获得实际的记忆器件,所以研究人员通常通过搭建电路模拟器的方法对其进行研究。本文直接从忆感器的定义出发,建立了一种磁控忆感器的数学模型,采用通用电路元器件设计了一种不包含忆阻器的磁控忆感"浮地"电路模拟器,并采用Matlab和Multisim混合仿真的方法,给出了在不同交变信号激励以及不同参数下磁控忆感电路模拟器的系统级仿真实验,结果表明:所设计的磁控忆感器具有磁通-电流之间的自收缩磁滞回线特性,是一种具有记忆特性的非线性电感,这与理论概念上的忆感器特性相吻合,从而为忆感器在电子学领域产生新的应用电路提供了器件模拟实体。

The emergence of mem-elements provides a new method for circuit design. In this paper, a mathematical model of a flux-controlled meminductor is proposed directly from the definition of meminductor, and a new floating meminductor emulator which does not contain any memristor is designed with common off-the-shelf components. Then the system-level circuit simulation experiments with different alternating signals and different parameters are presented based on Multisim and Matlab simulation platform. The results show that the current-flux characteristic of the designed flux-controlled meminductor is a frequency-dependent pinched loop, this means that the proposed device is a kind of nonlinear inductor with memory and accords with the concept of meminductor and therefore it provides a device simulation entity for producing new application circuits in the field of electronics.