摘要
Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.
Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride （h-BN） by chemical vapor deposition. Hysteresis-free gate sweeping, metal- insulator transition, and T-γ （γ- 0.82-1.26） temperature dependent mobility were observed in the ZrS2 films.
基金
L. M. X. acknowledges support from National Natural Science Foundation of China （Nos. 21373066 and 11304052）, Beijing Nova programme （No. Z151100000315081） and Beijing Talents Fund （No. 2015000021223ZK17）. C. Z. C. acknowledges support from the Program for New Century Excellent Talents in University of China （No. NCET-07-0903）.
