一种改善器件性能的Halo工艺

Study of Halo Technology in Improving Device Performance

短沟效应是MOS器件特征尺寸缩小面对的关键挑战之一。Halo结构能够有效抑制短沟效应,合理的Halo区掺杂分布可以改善小尺寸器件性能。在对Halo注入条件进行优化的过程中,不仅考虑了Halo注入倾角和注入能量对器件常温特性和高低温特性的影响,还考虑到工艺波动,比较了多晶条宽变化对器件参数的影响。为了增加不同条件的可比性,以室温下的饱和电流作为基准,通过调节注入剂量,使不同Halo注入条件在室温下的饱和电流都相等。结果表明,对于130 nm多晶栅长,注入倾角60°,注入能量100 Ke V时器件特性有最好的温度稳定性和工艺容宽。

Short-Channel Effect（SCE） has long been deemed as one of the critical challenges facedin scaling down MOS devices. Halo structure effectively restrains SCE and improves the performance of small-size devices. During Halo implantation, tilt and energy impact on temperature property and process fluctuation, and POLY CD variety are considered. The paper compares various Halo implantation conditions with equal saturation current at room temperature. The experiment result shows that the best implant condition is 60°tilt and 100 Ke V energy for 130 nm POLY CD, under which devices have the best temperature stability and process tolerance.