硅的深度反应离子刻蚀切割可行性研究

Feasibility Study on Wafer Dicing by Silicon Deep Reactive Ion Etching

评估了使用深反应离子刻蚀工艺来进行晶圆的切割,用于替代传统的刀片机械切割方式。结果表明,使用深反应离子刻蚀工艺,晶圆划片道内的硅通过等离子化学反应生成气态副产物被去除,从而避免了芯片侧面的机械损伤。切割后整个晶圆没有出现颗粒沾污,芯片边缘没有崩角以及开裂等损伤。该工艺还可以适用于更窄的划片道切割要求。

The paper introduces deep reactive ion etching method to replace mechanical sawing. Mechanical damage frequently occurred at the wafer sidewall can be eliminated due to the chemical reaction in the dicing saw using the method. No particles, collapses and cracks occur after dicing.