Ge2Sb2Te5相变薄膜的结构及结晶温度研究

Study on Structure and Crystallization Temperature of Ge_2Sb_2Te_5 Phase-change Film

利用射频磁控溅射法在室温下沉积了GST相变薄膜,利用XRD、AFM对其结构进行表征,原位XRD及DSC测试确定其结晶温度.（原位）XRD测试表明,室温下沉积的GST薄膜为非晶态,且在室温-375℃温度范围内,样品经历了非晶态→立方晶态→六方晶态相转变;通过原位XRD和DSC测试确定的GST薄膜的结晶温度一致,为-150℃.

Ge2Sb2Te5 film was prepared by RF magnetron sputtering method at room temperature, and its structure and crystallization temperature were investigated by in-situ X-ray diffraction, AFM and DSC methods. XRD confirmed that the as-deposited film was amorphous. With increasing temperature to 375℃, the phase transition of GST film went through three states, amorphous→cubic→hexagonal. DSC result indicated that the crystallization temperature of GST film was -150℃,which consistent with in-situ XRD result.